parameter symbol value unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 140 v emitter-base voltage v ebo 6.0 v collector current i c 12 a base current i b 1.2 a total dissipation at p tot 100 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c 2SD1047 / 2sb817 description parameter symbol test conditions min. typ. max. unit collector cut-off current i ceo v cb =140v, i e =0 10 ua emitter cut-off current i ebo v eb =6v, i c =0 10 ua collector-emitter sustaining voltage v ceo i c =30ma, i b =0 140 v dc current gain h fe1 v ce =5.0v, i c =1.0a 60 200 h fe2 v ce =5.0v, i c =6.0a 20 collector-emitter saturation voltage v ce(sat) i c =5.0a,i b =0.5a 2.5 v base-emitter voltage v be v ce =5.0v,i c =1.0a 1.5 v current gain bandwidth product f t v ce =5.0v,i c =1.0a 15 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 300 pf complementary silicon power ttransistors product specification it is intented for use in power amplifier and switching applications. electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o to-3pn note : hfe1 classification d: 60~120, e: 100~200 tiger electronic co.,ltd
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